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215 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SPB80N06S2-08 by Infineon Technologies

SPB80N06S2-08

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 215 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;

AVALANCHE RATED

450 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

215 W

320 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SILICON

SPP80N06S2-08 by Infineon Technologies

SPP80N06S2-08

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; JESD-30 Code: R-PSFM-T3; Additional Features: AVALANCHE RATED;

AVALANCHE RATED

450 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

215 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

NTB5426NT4G by Onsemi

NTB5426NT4G

Onsemi

NTB5426NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A ID, 0.006 ohm RDS(on), and 260A IDM. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 215W in a SMALL OUTLINE package.

735 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

215 W

260 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON