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210 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW34NM60ND by STMicroelectronics

STW34NM60ND

STMicroelectronics

STW34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 116A max pulsed drain current and 0.11 ohm max drain-source resistance. Operating in enhancement mode, it has a 210W power dissipation rating and can withstand up to 150°C temperature.

ULTRA-LOW RESISTANCE

345 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

29 A

29 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

210 W

116 A

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW36NM60N by STMicroelectronics

STW36NM60N

STMicroelectronics

STW36NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 29A ID. Ideal for SWITCHING applications, it has a max IDM of 116A and EAS of 345mJ. Operating in ENHANCEMENT MODE, it features 0.105 ohm Drain-Source On Resistance and can handle up to 210W power dissipation at 150 °C.

345 mJ

SINGLE WITH BUILT-IN DIODE

600 V

29 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

1.75 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

210 W

116 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STB34NM60N by STMicroelectronics

STB34NM60N

STMicroelectronics

STB34NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 126A IDM, 345mJ EAS, and 0.105ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 210W and can handle up to 31.5A ID.

345 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

29 A

31.5 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

210 W

126 A

FET General Purpose Powers

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP80NF55L-06 by STMicroelectronics

STP80NF55L-06

STMicroelectronics

STP80NF55L-06 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic devices.

LOGIC LEVEL COMPATIBLE

1300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

210 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB80NF55-06-1 by STMicroelectronics

STB80NF55-06-1

STMicroelectronics

STB80NF55-06-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic circuits.

1300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

210 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB80NF55L-06T4 by STMicroelectronics

STB80NF55L-06T4

STMicroelectronics

STB80NF55L-06T4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.

LOGIC LEVEL COMPATIBLE

1300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

210 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

SPB80N06S2L-07 by Infineon Technologies

SPB80N06S2L-07

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 210 W; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

450 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

210 W

320 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

SPP80N06S2L-07 by Infineon Technologies

SPP80N06S2L-07

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Avalanche Energy Rating (EAS): 450 mJ; JESD-609 Code: e3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

450 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

210 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP80N06S2L-07 by Infineon Technologies

IPP80N06S2L-07

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Drain Current (ID): 80 A; Operating Mode: ENHANCEMENT MODE;

LOGIC LEVEL COMPATIBLE

450 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

210 W

320 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

STW21N90K5 by STMicroelectronics

STW21N90K5

STMicroelectronics

STW21N90K5 by STMicroelectronics is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 170mJ EAS, and 0.299 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with 210W Pd max and can withstand up to 150°C.

170 mJ

SINGLE WITH BUILT-IN DIODE

900 V

17 A

17 A

.299 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

210 W

68 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW34NM60N by STMicroelectronics

STW34NM60N

STMicroelectronics

STW34NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 116A IDM, 345mJ EAS, and 0.105 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 210W at 150°C.

345 mJ

SINGLE WITH BUILT-IN DIODE

600 V

29 A

29 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

210 W

116 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON