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21.6 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4C13NT3G by Onsemi

NTMFS4C13NT3G

Onsemi

NTMFS4C13NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 106A and EAS of 22mJ, making it suitable for high-power operations. With a low 0.0091 ohm RDS(on), this MOSFET offers efficient performance in various electronic devices.

22 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

38 A

7.2 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

127 pF

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

21.6 W

106 A

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4C032NT3G by Onsemi

NTMFS4C032NT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21.6 W; Maximum Feedback Capacitance (Crss): 127 pF; Maximum Drain Current (ID): 7.2 A;

22 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

38 A

7.2 A

.00735 ohm

METAL-OXIDE SEMICONDUCTOR

127 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

21.6 W

106 A

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON