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20.5 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMT69M5LFVWQ-7 by Diodes Incorporated

DMT69M5LFVWQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.5 W; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: S-PDSO-F8;

37.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

14.8 A

.0083 ohm

METAL-OXIDE SEMICONDUCTOR

52 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

20.5 W

160 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT69M5LFVWQ-13 by Diodes Incorporated

DMT69M5LFVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.5 W; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 37.5 mJ;

37.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

14.8 A

.0083 ohm

METAL-OXIDE SEMICONDUCTOR

52 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

20.5 W

160 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT69M5LFVW-13 by Diodes Incorporated

DMT69M5LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.5 W; No. of Elements: 1; Transistor Element Material: SILICON;

37.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

14.8 A

.0083 ohm

METAL-OXIDE SEMICONDUCTOR

52 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

20.5 W

160 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON