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2.8 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AO4490L by Alpha & Omega Semiconductor

AO4490L

Alpha & Omega Semiconductor

AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.

SINGLE WITH BUILT-IN DIODE

30 V

16 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

238 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.8 W

2.8 W

120 A

YES

GULL WING

DUAL

SWITCHING

SILICON

FDZ5047N by Fairchild Semiconductor

FDZ5047N

Fairchild Semiconductor

Fairchild Semiconductor's FDZ5047N is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.0029 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package has a RECTANGULAR shape with BALL terminals, making it suitable for surface mount installations.

SINGLE WITH BUILT-IN DIODE

30 V

22 A

22 A

.0029 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBGA-B36

e0

1

36

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

N-CHANNEL

2.8 W

75 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

BALL

BOTTOM

SWITCHING

SILICON

IRF6648TR1PBF by International Rectifier

IRF6648TR1PBF

International Rectifier

IRF6648TR1PBF by International Rectifier is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 260A.

LOW CONDUCTION LOSS

47 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

86 A

86 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N3

e1

1

1

3

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.8 W

260 A

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

NO LEAD

BOTTOM

30

SWITCHING

SILICON

SFM9014TF by Fairchild Semiconductor

SFM9014TF

Fairchild Semiconductor

SFM9014TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max IDM of 14A and EAS of 8.3mJ, it offers high performance in a small outline package suitable for various power management needs.

8.3 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

1.8 A

1.8 A

.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2.8 W

14 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

CSD25401Q3 by Texas Instruments

CSD25401Q3

Texas Instruments

CSD25401Q3 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 82A Max Pulsed Drain Current, and 0.0182 ohm Max RDS(on). With a PLASTIC/EPOXY body and ENHANCEMENT MODE operation, it offers reliable performance in various electronic systems.

AVALANCHE RATED

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

60 A

14 A

.0182 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.8 W

82 A

Not Qualified

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMPH4029LFG-13 by Diodes Incorporated

DMPH4029LFG-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;

32 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

8 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

107 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.8 W

88 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMPH4029LFG-7 by Diodes Incorporated

DMPH4029LFG-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;

32 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

8 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

107 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.8 W

88 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMNH4004SPS-13 by Diodes Incorporated

DMNH4004SPS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Package Shape: RECTANGULAR; Minimum Operating Temperature: -55 Cel;

536 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

171 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.8 W

400 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON