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2.75 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AOCR32326 by Alpha & Omega Semiconductor

AOCR32326

Alpha & Omega Semiconductor

AOCR32326 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, 130A IDM, and 0.0042 ohm RDS. It is used for SWITCHING applications in COMMON DRAIN configuration. Operating temp range: -55 to 150 °C.

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

28 A

.0042 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.75 W

130 A

YES

NO LEAD

BOTTOM

SWITCHING

SILICON