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2.6 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMPH4015SPS-13 by Diodes Incorporated

DMPH4015SPS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;

260 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

12 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

526 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2.6 W

100 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMPH3010LPS-13 by Diodes Incorporated

DMPH3010LPS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Terminal Form: FLAT; Terminal Position: DUAL;

113 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

15 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

647 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.6 W

100 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMPH3010LPSQ-13 by Diodes Incorporated

DMPH3010LPSQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Drain-Source On Resistance: .01 ohm; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

113 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

60 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

647 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.6 W

100 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT3009UFVW-7 by Diodes Incorporated

DMT3009UFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

18 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

10.6 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

76 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

80 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT3009UFVW-13 by Diodes Incorporated

DMT3009UFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .011 ohm;

18 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

10.6 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

76 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

80 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH4014LDVW-13 by Diodes Incorporated

DMTH4014LDVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;

19.6 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

10.2 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

110 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH4014LDVW-7 by Diodes Incorporated

DMTH4014LDVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;

19.6 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

10.2 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

110 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT32M4LFG-13 by Diodes Incorporated

DMT32M4LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Terminals: 8; Transistor Application: SWITCHING;

172 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

262 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

440 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT64M1LCG-7 by Diodes Incorporated

DMT64M1LCG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Elements: 1; Maximum Drain Current (ID): 67.8 A;

206 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

65 V

67.8 A

.0054 ohm

METAL-OXIDE SEMICONDUCTOR

91 pF

S-PDSO-N8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

260 A

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT64M1LCG-13 by Diodes Incorporated

DMT64M1LCG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V;

206 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

65 V

67.8 A

.0054 ohm

METAL-OXIDE SEMICONDUCTOR

91 pF

S-PDSO-N8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.6 W

260 A

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP26M1UPSW-13 by Diodes Incorporated

DMP26M1UPSW-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Drain Current (ID): 83 A; Reference Standard: MIL-STD-202;

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

83 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

564 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2.6 W

134 A

MIL-STD-202

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

SWITCHING

SILICON