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2.47 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN1002UCA6-7 by Diodes Incorporated

DMN1002UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.47 W; Maximum Feedback Capacitance (Crss): 297 pF; Package Style (Meter): CHIP CARRIER;

ESD PROTECTED

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

METAL-OXIDE SEMICONDUCTOR

297 pF

R-XBCC-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.47 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

10255 ns

4787 ns