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2.16 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMC4028SSDQ-13 by Diodes Incorporated

DMC4028SSDQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Shape: RECTANGULAR; No. of Elements: 2;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

7.2 A

5.4 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

2.16 W

27.3 A

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMP1011LFV-13 by Diodes Incorporated

DMP1011LFV-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

ESD PROTECTED

86 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

13 A

13 A

.0117 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.16 W

70 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMP1011LFV-7 by Diodes Incorporated

DMP1011LFV-7

Diodes Incorporated

DMP1011LFV-7 by Diodes Inc. is a P-channel FET with 12V DS breakdown voltage, 70A pulsed drain current, and 0.0117 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.16W. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures from -55 to 150°C.

ESD PROTECTED

86 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

13 A

13 A

.0117 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.16 W

70 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN3013LDG-13 by Diodes Incorporated

DMN3013LDG-13

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Style (Meter): SMALL OUTLINE; Maximum Feedback Capacitance (Crss): 16 pF;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3013LDG-7 by Diodes Incorporated

DMN3013LDG-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Maximum Drain-Source On Resistance: .0177 ohm; Peak Reflow Temperature (C): 260;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3013LFG-13 by Diodes Incorporated

DMN3013LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 30 V;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3013LFG-7 by Diodes Incorporated

DMN3013LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMP1011LFVQ-7 by Diodes Incorporated

DMP1011LFVQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 19 A;

86 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

19 A

.0117 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.16 W

70 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMP1011LFVQ-13 by Diodes Incorporated

DMP1011LFVQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; JESD-30 Code: R-PDSO-F8; Package Body Material: PLASTIC/EPOXY;

86 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

19 A

.0117 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.16 W

70 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON