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2.14 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN4025LSD-13 by Diodes Incorporated

DMN4025LSD-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.14 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

5.6 A

5.6 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.14 W

29 A

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON