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2.03 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMP2023UFDF-13 by Diodes Incorporated

DMP2023UFDF-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;

27 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

7.6 A

.027 ohm

METAL-OXIDE SEMICONDUCTOR

115 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.03 W

40 A

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP3028LFDEQ-13 by Diodes Incorporated

DMP3028LFDEQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202; Maximum Feedback Capacitance (Crss): 165 pF;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

6.8 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

165 pF

S-PDSO-N6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.03 W

40 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

152 ns

41 ns

DMP3028LFDEQ-7 by Diodes Incorporated

DMP3028LFDEQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

6.8 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

165 pF

S-PDSO-N6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.03 W

40 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

152 ns

41 ns