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195.3 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPI65R150CFDXKSA1 by Infineon Technologies

IPI65R150CFDXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 195.3 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSIP-T3;

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

195.3 W

72 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPP65R150CFDXKSA1 by Infineon Technologies

IPP65R150CFDXKSA1

Infineon Technologies

IPP65R150CFDXKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 72A pulsed drain current, 0.15 ohm max on-resistance, and 614mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 195.3W and can withstand temperatures up to 150°C.

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

195.3 W

72 A

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPW65R150CFDFKSA1 by Infineon Technologies

IPW65R150CFDFKSA1

Infineon Technologies

Infineon's IPW65R150CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A IDM and 614mJ EAS, ensuring high performance in ENHANCEMENT MODE operation. With a max power dissipation of 195.3W and -55 to 150°C operating temperature range, it offers reliable performance in various industrial settings.

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

195.3 W

72 A

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPP65R150CFDAAKSA1 by Infineon Technologies

IPP65R150CFDAAKSA1

Infineon Technologies

IPP65R150CFDAAKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It has a max IDM of 72A and EAS of 614mJ, operating in enhancement mode. With a max power dissipation of 195.3W and RDS(on) of 0.15 ohm, it's suitable for high-power systems.

HIGH RELIABILITY

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

195.3 W

72 A

AEC-Q101

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW65R150CFDAFKSA1 by Infineon Technologies

IPW65R150CFDAFKSA1

Infineon Technologies

Infineon's IPW65R150CFDAFKSA1 is a 650V N-CHANNEL FET with 72A IDM for SWITCHING applications. It features 0.15 ohm RDS(on), 195.3W Pdiss, and operates at up to 150°C. Ideal for automotive use (AEC-Q101) due to its robust design and high energy rating of 614mJ.

HIGH RELIABILITY

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

195.3 W

72 A

AEC-Q101

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW65R150CFDFKSA2 by Infineon Technologies

IPW65R150CFDFKSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 195.3 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

195.3 W

72 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP65R150CFDXKSA2 by Infineon Technologies

IPP65R150CFDXKSA2

Infineon Technologies

IPP65R150CFDXKSA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a 72A Max Pulsed Drain Current and 0.15 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 195.3W power dissipation.

614 mJ

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

195.3 W

72 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON