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195 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK7Y9R9-80E/CX by NXP Semiconductors

BUK7Y9R9-80E/CX

NXP Semiconductors

BUK7Y9R9-80E/CX from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 89 A, power dissipation up to 195 W, and operates at temperatures up to 175 °C, ideal for high-performance applications.

SINGLE

89 A

89 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

195 W

FET General Purpose Power

YES

FQP13N50C by Fairchild Semiconductor

FQP13N50C

Fairchild Semiconductor

FQP13N50C by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 195W, this transistor has a 0.48 ohm Drain-Source On Resistance and can handle up to 13A Drain Current.

860 mJ

SINGLE WITH BUILT-IN DIODE

500 V

13 A

13 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

195 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPL65R165CFDAUMA1 by Infineon Technologies

IPL65R165CFDAUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 195 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): 2A;

614 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

21.3 A

21.3 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

S-PSSO-N4

e3

2A

1

4

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

195 W

67 A

YES

Tin (Sn)

NO LEAD

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPL65R165CFDAUMA2 by Infineon Technologies

IPL65R165CFDAUMA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 195 W; Maximum Drain Current (Abs) (ID): 21.3 A; Package Shape: SQUARE;

614 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

21.3 A

21.3 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

S-PSSO-N4

e3

2A

1

4

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

195 W

67 A

YES

TIN

NO LEAD

SINGLE

SWITCHING

SILICON