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19.2 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIA430DJ-T1-GE3 by Vishay Intertechnology

SIA430DJ-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIA430DJ-T1-GE3 is an N-channel Power FET with a built-in diode, ideal for switching applications. It features a max drain current of 12A, pulsed drain current of 40A, and low on-resistance of 0.0135 ohm. Operating in enhancement mode, this MOSFET has a breakdown voltage of 20V and can handle up to 19.2W power dissipation at a max temp of 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

12 A

12 A

.0135 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-N3

e3

1

3

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

260

N-CHANNEL

19.2 W

40 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT6009LFG-13 by Diodes Incorporated

DMT6009LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;

40.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

11 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

19.2 W

90 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON