Loading...

170 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TK15J60U(F) by Toshiba

TK15J60U(F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (Abs) (ID): 15 A; Maximum Drain Current (ID): 15 A;

SINGLE

15 A

15 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

170 W

FET General Purpose Power

NO

STB28N60M2 by STMicroelectronics

STB28N60M2

STMicroelectronics

STB28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 88A IDM, and 0.15 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 170W.

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

22 A

22 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

170 W

88 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STW28N60M2 by STMicroelectronics

STW28N60M2

STMicroelectronics

STW28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 88A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 170W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.

350 mJ

SINGLE WITH BUILT-IN DIODE

600 V

22 A

22 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

170 W

88 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP15N95K5 by STMicroelectronics

STP15N95K5

STMicroelectronics

STP15N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, ideal for SWITCHING applications. It features 48A IDM and 124mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 170W and -55 to 150 °C operating temperature range, it offers high performance in various industrial settings.

124 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

950 V

12 A

.5 ohm

METAL-OXIDE SEMICONDUCTOR

1 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

170 W

48 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BTS244ZE-3043 by Infineon Technologies

BTS244ZE-3043

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220;

AVALANCHE RATED

1650 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

55 V

35 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

400 pF

TO-220

R-PSFM-T5

e3

1

5

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

170 W

188 A

Not Qualified

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

100 ns

130 ns

STW28N65M2 by STMicroelectronics

STW28N65M2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; No. of Terminals: 3;

760 mJ

SINGLE WITH BUILT-IN DIODE

650 V

20 A

20 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

170 W

80 A

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP27N60M2-EP by STMicroelectronics

STP27N60M2-EP

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Avalanche Energy Rating (EAS): 260 mJ; No. of Terminals: 3;

260 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

20 A

.163 ohm

METAL-OXIDE SEMICONDUCTOR

1 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

170 W

80 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STW27N60M2-EP by STMicroelectronics

STW27N60M2-EP

STMicroelectronics

STW27N60M2-EP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 260mJ EAS, and 0.163 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 170W and can withstand up to 150°C.

260 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

20 A

.163 ohm

METAL-OXIDE SEMICONDUCTOR

1 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

170 W

80 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTH4L080N120SC1 by Onsemi

NTH4L080N120SC1

Onsemi

NTH4L080N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, ideal for switching applications. It features 125A IDM, 171mJ EAS, and 0.11 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 175°C, it offers high performance in various industrial settings.

HIGH RELIABILITY

171 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

29 A

29 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

170 W

125 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

54 ns

28 ns

XPW4R10ANB,L1XHQ by Toshiba

XPW4R10ANB,L1XHQ

Toshiba

Toshiba XPW4R10ANB,L1XHQ is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 210A IDM, 241mJ EAS, and 0.0062 ohm Drain-Source On Resistance. Suitable for high-power circuits requiring fast switching capabilities in automotive and industrial electronics.

241 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

70 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

300 pF

S-PDSO-F8

1

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

170 W

210 A

AEC-Q101

YES

FLAT

DUAL

SWITCHING

SILICON