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15.6 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIS478DN-T1-GE3 by Vishay Intertechnology

SIS478DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIS478DN-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage. Ideal for switching applications, it features 40A IDM and 0.02 ohm RDS(on). With a max power dissipation of 15.6W and operating temperature up to 150°C, this MOSFET is suitable for various high-power electronic designs.

5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

12 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-C5

e3

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

15.6 W

40 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

C BEND

DUAL

40

SWITCHING

SILICON