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15 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SFT1431-W by Onsemi

SFT1431-W

Onsemi

SFT1431-W by Onsemi is a N-CHANNEL Power FET with 11A ID and 15W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with TIN BISMUTH terminal finish.

SINGLE

11 A

11 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

15 W

FET General Purpose Power

NO

TIN BISMUTH

RSD050N06TL by ROHM

RSD050N06TL

ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;

SINGLE WITH BUILT-IN DIODE

60 V

5 A

5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e2

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

15 W

15 A

Not Qualified

FET General Purpose Power

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON