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147 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP89N055MUK-S18-AY by Renesas Electronics

NP89N055MUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Maximum Drain Current (ID): 90 A; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

147 W

FET General Purpose Powers

NO

NOT SPECIFIED

NP89N055NUK-S18-AY by Renesas Electronics

NP89N055NUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

147 W

FET General Purpose Powers

NO

NOT SPECIFIED

FQB14N30TM by Fairchild Semiconductor

FQB14N30TM

Fairchild Semiconductor

FQB14N30TM by Fairchild Semiconductor is a N-CHANNEL Power FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 14.4A, Max Power Dissipation of 147W, and an Operating Temperature up to 150°C. This SINGLE configuration transistor in PLASTIC/EPOXY package is designed for high-performance ENHANCEMENT MODE operation.

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

300 V

14.4 A

14.4 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

57.6 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON