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144 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TK12J60U(F) by Toshiba

TK12J60U(F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 144 W; Maximum Drain Current (Abs) (ID): 12 A; Maximum Operating Temperature: 150 Cel;

SINGLE

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

144 W

FET General Purpose Power

NO

FDD3672-F085 by Onsemi

FDD3672-F085

Onsemi

FDD3672-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 44A Drain Current, and 0.028 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 144W Power Dissipation, -55 to 175 °C Operating Temperature range, and ENHANCEMENT MODE operation.

73 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

44 A

44 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

144 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

IRFR12N25DTRRP by Infineon Technologies

IRFR12N25DTRRP

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ;

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

250 V

14 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

TO-252AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

144 W

56 A

YES

GULL WING

SINGLE

SWITCHING

SILICON