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130 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW20N65M5 by STMicroelectronics

STW20N65M5

STMicroelectronics

STW20N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 72A IDM, and 0.19 ohm RDS. It's used for SWITCHING applications due to its 130W power dissipation, 150°C max temp, and METAL-OXIDE SEMICONDUCTOR technology.

270 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

18 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

130 W

72 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB18NM60ND by STMicroelectronics

STB18NM60ND

STMicroelectronics

STB18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 52A IDM, and 0.29 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 130W power dissipation.

187 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

13 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

130 W

52 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

STP18NM60ND by STMicroelectronics

STP18NM60ND

STMicroelectronics

STP18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 130W at 150 °C.

187 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

13 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

130 W

52 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW18NM60ND by STMicroelectronics

STW18NM60ND

STMicroelectronics

STW18NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.29 ohm Drain-Source On Resistance, and 150 °C Max Operating Temp.

187 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

13 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

130 W

52 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW10N105K5 by STMicroelectronics

STW10N105K5

STMicroelectronics

STW10N105K5 by STMicroelectronics is a N-CHANNEL FET with 6A max drain current and 130W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

130 W

FET General Purpose Power

NO

NOT SPECIFIED

STD180N4F6 by STMicroelectronics

STD180N4F6

STMicroelectronics

STD180N4F6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0028 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

130 W

320 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

TK16G60W,RVQ by Toshiba

TK16G60W,RVQ

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;

194 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

15.8 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

130 W

63.2 A

YES

GULL WING

SINGLE

SWITCHING

SILICON