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12.5 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMPB20UN,115 by NXP Semiconductors

PMPB20UN,115

NXP Semiconductors

PMPB20UN,115 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 6.6 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronics.

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

6.6 A

6.6 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

12.5 W

27 A

IEC-60134

FET General Purpose Power

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

PMPB12R5EPX by Nexperia

PMPB12R5EPX

Nexperia

The Nexperia PMPB12R5EPX is a P-channel FET with 30V DS breakdown voltage, 35A IDM, and 0.015 ohm RDS(on). Ideal for switching applications in small outline packages, it operates from -55 to 150°C. With drain connection and built-in diode, it's suitable for enhancement mode operation.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

8.8 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

139 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

P-CHANNEL

12.5 W

35 A

IEC-60134

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

SWITCHING

SILICON