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106 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS5C430NT3G by Onsemi

NVMFS5C430NT3G

Onsemi

NVMFS5C430NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

106 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C430NWFT1G by Onsemi

NVMFS5C430NWFT1G

Onsemi

NVMFS5C430NWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

106 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C430NWFT3G by Onsemi

NVMFS5C430NWFT3G

Onsemi

NVMFS5C430NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

106 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

IPW60R105CFD7XKSA1 by Infineon Technologies

IPW60R105CFD7XKSA1

Infineon Technologies

Infineon's IPW60R105CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 79A IDM and 0.105ohm RDS(on), it operates in enhancement mode with 106W power dissipation. Suitable for high-power systems requiring efficient current control.

93 mJ

SINGLE WITH BUILT-IN DIODE

600 V

21 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

106 W

79 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP60R105CFD7XKSA1 by Infineon Technologies

IPP60R105CFD7XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 106 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (Abs) (ID): 21 A;

93 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

21 A

21 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

106 W

79 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON