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103 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9222-55A,127 by NXP Semiconductors

BUK9222-55A,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

48 A

48 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

103 W

193 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

SCT3160KLHRC11 by ROHM

SCT3160KLHRC11

ROHM

ROHM's SCT3160KLHRC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 17A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 103W, this transistor is designed for high-performance requirements in automotive and industrial sectors.

SINGLE WITH BUILT-IN DIODE

1200 V

17 A

17 A

.208 ohm

METAL-OXIDE SEMICONDUCTOR

18 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

265

N-CHANNEL

103 W

42 A

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

10

SWITCHING

SILICON CARBIDE