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101 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPW65R125C7XKSA1 by Infineon Technologies

IPW65R125C7XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 101 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;

HIGH RELIABILITY

89 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

18 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

101 W

75 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB65R125C7ATMA1 by Infineon Technologies

IPB65R125C7ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 101 W; Maximum Drain Current (ID): 18 A; JEDEC-95 Code: TO-263AB;

89 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

18 A

18 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

101 W

75 A

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB65R125C7ATMA2 by Infineon Technologies

IPB65R125C7ATMA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 101 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .125 ohm;

89 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

18 A

18 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

101 W

75 A

YES

GULL WING

SINGLE

SWITCHING

SILICON