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1.7 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMPB12UN,115 by NXP Semiconductors

PMPB12UN,115

NXP Semiconductors

NXP Semiconductors PMPB12UN,115 is a N-CHANNEL FET with 20V DS breakdown voltage and 31A IDM. Ideal for switching applications, it has a max drain current of 7.9A, 0.018 ohm RDS(on), and operates in enhancement mode at up to 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

7.9 A

7.9 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

1.7 W

31 A

IEC-60134

FET General Purpose Power

YES

Tin (Sn)

NO LEAD

DUAL

SWITCHING

SILICON

UPA1857GR-9JG-E1-A by Renesas Electronics

UPA1857GR-9JG-E1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Drain Current (ID): 3.8 A; Maximum Drain Current (Abs) (ID): 3.8 A; Terminal Finish: TIN BISMUTH;

3.8 A

3.8 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

1.7 W

FET General Purpose Power

YES

TIN BISMUTH

DMP2033UVT-13 by Diodes Incorporated

DMP2033UVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Feedback Capacitance (Crss): 63 pF; Package Style (Meter): SMALL OUTLINE;

SINGLE WITH BUILT-IN DIODE

20 V

4.2 A

4.2 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

63 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.7 W

10 A

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

STS1DN45K3 by STMicroelectronics

STS1DN45K3

STMicroelectronics

STS1DN45K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 450V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

SEPARATE, 2 ELEMENTS

450 V

.5 A

.5 A

3.8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.7 W

2 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

40

SWITCHING

SILICON

DMN10H170SVT-13 by Diodes Incorporated

DMN10H170SVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

100 V

2.6 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.7 W

11.2 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN10H170SVTQ-13 by Diodes Incorporated

DMN10H170SVTQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

100 V

2.6 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

R-PDSO-G6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.7 W

11.2 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3032LFDB-13 by Diodes Incorporated

DMN3032LFDB-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; No. of Terminals: 6; Minimum DS Breakdown Voltage: 30 V;

HIGH RELIABILITY

10 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

6.2 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

S-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.7 W

25 A

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMN4060SVTQ-7 by Diodes Incorporated

DMN4060SVTQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

18 mJ

SINGLE WITH BUILT-IN DIODE

45 V

4.3 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

42.5 pF

R-PDSO-G6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.7 W

23 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN4060SVTQ-13 by Diodes Incorporated

DMN4060SVTQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Drain Current (ID): 4.3 A; Maximum Drain-Source On Resistance: .046 ohm;

18 mJ

SINGLE WITH BUILT-IN DIODE

45 V

4.3 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

42.5 pF

R-PDSO-G6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.7 W

23 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON