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1.67 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN10H220LVT-13 by Diodes Incorporated

DMN10H220LVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Maximum Drain Current (ID): 1.87 A; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

100 V

1.87 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

17 pF

R-PDSO-G6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.67 W

6.6 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2067LSS-13 by Diodes Incorporated

DMP2067LSS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Maximum Pulsed Drain Current (IDM): 30 A; Transistor Element Material: SILICON;

17.5 mJ

SINGLE WITH BUILT-IN DIODE

20 V

12.9 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

89 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.67 W

30 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2541UCP9-7 by Diodes Incorporated

DMP2541UCP9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; No. of Terminals: 9; Maximum Pulsed Drain Current (IDM): 35 A;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

25 V

3.8 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

S-XBCC-N9

e2

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

P-CHANNEL

1.67 W

35 A

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON