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1.47 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMP2070UCB6-7 by Diodes Incorporated

DMP2070UCB6-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Maximum Pulsed Drain Current (IDM): 12 A; Package Style (Meter): GRID ARRAY;

SINGLE WITH BUILT-IN DIODE

20 V

3.5 A

2.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PBGA-B6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

P-CHANNEL

1.47 W

12 A

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

DMP2101UCP9-7 by Diodes Incorporated

DMP2101UCP9-7

Diodes Incorporated

P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Package Style (Meter): CHIP CARRIER; JESD-609 Code: e2;

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

2.5 A

METAL-OXIDE SEMICONDUCTOR

8.4 pF

S-XBCC-N9

e2

2

9

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

P-CHANNEL

1.47 W

22 A

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON