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1.2 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP40N10VDF-E1-AY by Renesas Electronics

NP40N10VDF-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

40 A

40 A

.037 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.2 W

80 A

Not Qualified

FET General Purpose Powers

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP40N10VDF-E2-AY by Renesas Electronics

NP40N10VDF-E2-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .037 ohm;

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

40 A

40 A

.037 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.2 W

80 A

Not Qualified

FET General Purpose Powers

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

DMN3053L-13 by Diodes Incorporated

DMN3053L-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.2 W

35 A

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

FDC642P_F085 by Fairchild Semiconductor

FDC642P_F085

Fairchild Semiconductor

FDC642P_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount assembly.

72 mJ

SINGLE WITH BUILT-IN DIODE

20 V

4 A

4 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.2 W

20 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2055UQ-7 by Diodes Incorporated

DMN2055UQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;

SINGLE WITH BUILT-IN DIODE

20 V

4.8 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.2 W

25 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2055UQ-13 by Diodes Incorporated

DMN2055UQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; No. of Terminals: 3; Terminal Position: DUAL;

SINGLE WITH BUILT-IN DIODE

20 V

4.8 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.2 W

25 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2109UVTQ-13 by Diodes Incorporated

DMP2109UVTQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; No. of Elements: 1; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202;

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.2 W

20 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP2109UVTQ-7 by Diodes Incorporated

DMP2109UVTQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.2 W

20 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON