Loading...

1 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP40N10YDF-E1-AY by Renesas Electronics

NP40N10YDF-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 80 A;

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

40 A

40 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

1

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1 W

80 A

Not Qualified

FET General Purpose Powers

YES

Pure Tin (Sn)

FLAT

DUAL

SWITCHING

SILICON

SSM3K335R,LF by Toshiba

SSM3K335R,LF

Toshiba

Toshiba's SSM3K335R,LF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a 0.038 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

6 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1 W

14 A

YES

FLAT

DUAL

SWITCHING

SILICON