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.87 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TPIC5302D by Texas Instruments

TPIC5302D

Texas Instruments

TPIC5302D by Texas Instruments is a N-CHANNEL FET with 3 elements and built-in diode, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 7A, Min DS Breakdown Voltage of 60V, and Avalanche Energy Rating of 10.5mJ. This small outline package has GULL WING terminals and operates in ENHANCEMENT MODE up to 150°C.

10.5 mJ

ISOLATED

SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE

60 V

1.4 A

1.4 A

.35 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

MS-012AC

R-PDSO-G16

3

16

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.087 W

.87 W

7 A

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

84 ns

56 ns