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.8 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SSM3K106TU(TE85L) by Toshiba

SSM3K106TU(TE85L)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 1.2 A;

SINGLE

1.2 A

1.2 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.8 W

FET General Purpose Powers

YES

SSM5H12TU(TE85L,F) by Toshiba

SSM5H12TU(TE85L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 1.9 A;

SINGLE

1.9 A

1.9 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

125 Cel

N-CHANNEL

.8 W

FET General Purpose Powers

YES

NTMS7N03R2 by Onsemi

NTMS7N03R2

Onsemi

NTMS7N03R2 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.023 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount designs with GULL WING terminals, this transistor has an EAS of 288 mJ and can handle up to 4.8A ID.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

288 mJ

SINGLE WITH BUILT-IN DIODE

30 V

4.38 A

4.8 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.8 W

14 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON