Loading...

.73 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTR4503NT3 by Onsemi

NTR4503NT3

Onsemi

NTR4503NT3 by Onsemi is an N-CHANNEL FET with 2A max drain current and 0.73W power dissipation. Ideal for applications requiring a single configuration, surface mount capability, and operating temperature up to 150 °C. Perfect for enhancing performance in power management systems.

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

e0

1

1

ENHANCEMENT MODE

150 Cel

235

N-CHANNEL

.73 W

FET General Purpose Power

YES

TIN LEAD

NTMD6N02R2 by Onsemi

NTMD6N02R2

Onsemi

NTMD6N02R2 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A IDM, 0.035 ohm RDS(on), and 360mJ EAS for high-performance requirements. With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150 °C making it suitable for various industrial uses.

LOGIC LEVEL COMPATIBLE

360 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.92 A

3.92 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.73 W

30 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON