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.1 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SSM3K15ACT(TPL3) by Toshiba

SSM3K15ACT(TPL3)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.1 W

FET General Purpose Power

YES

SSM3K15CT(TPL3) by Toshiba

SSM3K15CT(TPL3)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

SINGLE

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.1 W

FET General Purpose Powers

YES

SSM3K16CT(TPL3) by Toshiba

SSM3K16CT(TPL3)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Drain Current (Abs) (ID): .1 A; No. of Elements: 1;

SINGLE

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.1 W

FET General Purpose Powers

YES

2SK2034(TE85L,F) by Toshiba

2SK2034(TE85L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .1 A;

SINGLE

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.1 W

FET General Purpose Powers

YES

2SK1829(TE85L,F) by Toshiba

2SK1829(TE85L,F)

Toshiba

The Toshiba 2SK1829(TE85L,F) is an N-CHANNEL Power FET with a max drain current of 0.05A and power dissipation of 0.1W in enhancement mode. Ideal for applications requiring low power consumption, such as portable electronics or battery-operated devices due to its single configuration and surface mount capability.

SINGLE

.05 A

.05 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.1 W

FET General Purpose Powers

YES