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SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9C10-55BIT/A,11 by Nexperia

BUK9C10-55BIT/A,11

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G6; Terminal Position: SINGLE;

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

55 V

75 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

401 A

AEC-Q101; IEC-60134

YES

GULL WING

SINGLE

SWITCHING

SILICON