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SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
VMM1500-0075P by IXYS Corporation

VMM1500-0075P

IXYS Corporation

IXYS Corporation's VMM1500-0075P is a N-CHANNEL FET with 75V DS Breakdown Voltage, 1500A ID, and 0.0008 ohm RDS. It features SERIES CONNECTED, CENTER TAP configuration for SWITCHING applications. This RECTANGULAR package has 2 elements in ENHANCEMENT MODE suitable for high-power operations.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

75 V

1500 A

.0008 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X7

2

7

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

VMM1000-01P by IXYS Corporation

VMM1000-01P

IXYS Corporation

IXYS Corporation's VMM1000-01P is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a 100V DS Breakdown Voltage, 0.0012 ohm RDS(on), and 1000A ID. Ideal for SWITCHING applications, this RECTANGULAR package FET operates in ENHANCEMENT MODE with SILICON material technology.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

100 V

1000 A

.0012 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X7

2

7

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON

DMN3013LDG-13 by Diodes Incorporated

DMN3013LDG-13

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Style (Meter): SMALL OUTLINE; Maximum Feedback Capacitance (Crss): 16 pF;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3013LDG-7 by Diodes Incorporated

DMN3013LDG-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Maximum Drain-Source On Resistance: .0177 ohm; Peak Reflow Temperature (C): 260;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3013LFG-13 by Diodes Incorporated

DMN3013LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 30 V;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3013LFG-7 by Diodes Incorporated

DMN3013LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

9.5 A

.0177 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.16 W

2.16 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3022LDG-13 by Diodes Incorporated

DMN3022LDG-13

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Case Connection: SOURCE; No. of Terminals: 8;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

7.6 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

10.6 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.96 W

1.96 W

50 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3022LDG-7 by Diodes Incorporated

DMN3022LDG-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Maximum Feedback Capacitance (Crss): 10.6 pF; Operating Mode: ENHANCEMENT MODE;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

7.6 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

10.6 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.96 W

1.96 W

50 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3022LFG-7 by Diodes Incorporated

DMN3022LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: MIL-STD-202;

28 mJ

SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

30 V

7.6 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

10.6 pF

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.96 W

1.96 W

50 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON