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SERIES, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFD4901NFT1G by Onsemi

NTMFD4901NFT1G

Onsemi

NTMFD4901NFT1G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a 28.8mJ EAS rating and 0.01 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.

28.8 mJ

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

23.4 A

13.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.45 W

60 A

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFD4902NFT1G by Onsemi

NTMFD4902NFT1G

Onsemi

NTMFD4902NFT1G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a small outline package. Operating at up to 150 °C, it offers high power dissipation of 3.45W for efficient performance.

28.8 mJ

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

23 A

13.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.45 W

60 A

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFD4902NFT3G by Onsemi

NTMFD4902NFT3G

Onsemi

NTMFD4902NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, it offers high performance in power management systems.

28.8 mJ

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

13.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

60 A

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

BSZ0909NDXTMA1 by Infineon Technologies

BSZ0909NDXTMA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 4 mJ; JESD-30 Code: S-PDSO-N8; Minimum Operating Temperature: -55 Cel;

AVALANCHE RATED

4 mJ

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

4.1 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

40 A

YES

TIN

NO LEAD

DUAL

SILICON

DMT3020LDT-7 by Diodes Incorporated

DMT3020LDT-7

Diodes Incorporated

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.95 W; Maximum Feedback Capacitance (Crss): 27 pF; Maximum Time At Peak Reflow Temperature (s): 30;

6.5 mJ

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

8.5 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

27 pF

S-PDSO-N8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.95 W

55 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON