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SEPARATE, 2 ELEMENTS Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
UPA2754GR(0)-E1-AY by Renesas Electronics

UPA2754GR(0)-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 2; Transistor Application: SWITCHING;

12.1 mJ

SEPARATE, 2 ELEMENTS

30 V

11 A

.0186 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

88 A

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS1DN45K3 by STMicroelectronics

STS1DN45K3

STMicroelectronics

STS1DN45K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 450V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

SEPARATE, 2 ELEMENTS

450 V

.5 A

.5 A

3.8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.7 W

2 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

40

SWITCHING

SILICON