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COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FDMD8440L by Onsemi

FDMD8440L

Onsemi

FDMD8440L by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 521A and EAS of 265mJ, making it suitable for high-power operations. With a compact SMALL OUTLINE package style and low 0.0026 ohm RDS(on), it ensures efficient performance in various electronic designs.

265 mJ

SOURCE

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

87 A

87 A

.0026 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PDSO-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

521 A

YES

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON

68 ns

35 ns

FDMD8430 by Onsemi

FDMD8430

Onsemi

FDMD8430 by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 562A IDM. Commonly used for SWITCHING applications, it features a 96mJ EAS rating and 0.00212 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.

96 mJ

SOURCE

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

28 A

.00212 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

R-PDSO-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.1 W

29 W

562 A

YES

NO LEAD

DUAL

SWITCHING

SILICON

150 ns

36 ns

DMP2101UCP9-7 by Diodes Incorporated

DMP2101UCP9-7

Diodes Incorporated

P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Package Style (Meter): CHIP CARRIER; JESD-609 Code: e2;

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

2.5 A

METAL-OXIDE SEMICONDUCTOR

8.4 pF

S-XBCC-N9

e2

2

9

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

P-CHANNEL

1.47 W

22 A

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON