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COMMON DRAIN, 2 ELEMENTS Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN2024UVT-13 by Diodes Incorporated

DMN2024UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .024 ohm; Transistor Application: SWITCHING;

COMMON DRAIN, 2 ELEMENTS

20 V

7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

35 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2024UVT-7 by Diodes Incorporated

DMN2024UVT-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

COMMON DRAIN, 2 ELEMENTS

20 V

7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

35 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

EFC2J022NUZTCG by Onsemi

EFC2J022NUZTCG

Onsemi

EFC2J022NUZTCG by Onsemi is a N-CHANNEL FET with 2 elements in COMMON DRAIN configuration. It operates in DEPLETION MODE for SWITCHING applications, with a min DS Breakdown Voltage of 12V and Max Power Dissipation of 1.8W at 150 °C. Ideal for power management systems requiring high performance in compact designs.

COMMON DRAIN, 2 ELEMENTS

12 V

METAL-OXIDE SEMICONDUCTOR

R-PBGA-B10

2

10

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

NOT SPECIFIED

N-CHANNEL

1.8 W

YES

BALL

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

DMN2024UVTQ-13 by Diodes Incorporated

DMN2024UVTQ-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Terminals: 6; Maximum Operating Temperature: 150 Cel;

COMMON DRAIN, 2 ELEMENTS

20 V

7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

35 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON