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BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
MSCSM170HM45CT3AG by Microchip Technology

MSCSM170HM45CT3AG

Microchip Technology

MSCSM170HM45CT3AG by Microchip is a N-CHANNEL FET with 4 elements in bridge configuration. It operates in enhancement mode for switching applications, with a min DS breakdown voltage of 1700V and max pulsed drain current of 130A. This power FET features silicon carbide material, 0.045 ohm max drain-source resistance, and can operate b/w -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

1700 V

64 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

R-XUFM-X25

4

25

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

130 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE