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6 W Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N4237PBFREE by Central Semiconductor

2N4237PBFREE

Central Semiconductor

2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.

3 A

100 pF

40 V

SINGLE

30

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

6 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

2 MHz

.6 V