Loading...

3 W Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FZT751QTC by Diodes Incorporated

FZT751QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

FZT749QTA by Diodes Incorporated

FZT749QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

FZT749QTC by Diodes Incorporated

FZT749QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

STD840DN40 by STMicroelectronics

STD840DN40

STMicroelectronics

STD840DN40 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures reliable performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

R-PDIP-T8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

3 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

FZT957QTC by Diodes Incorporated

FZT957QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

23 pF

300 V

SINGLE

90

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

85 MHz

.24 V

STD845DN40 by STMicroelectronics

STD845DN40

STMicroelectronics

STD845DN40 from STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures efficient performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

FZT692BQTA by Diodes Incorporated

FZT692BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 pF

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

FZT600BQTA by Diodes Incorporated

FZT600BQTA

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

HIGH RELIABILITY

COLLECTOR

2 A

15 pF

140 V

DARLINGTON

5000

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

1.2 V

MPQ2222APBFREE by Central Semiconductor

MPQ2222APBFREE

Central Semiconductor

MPQ2222APBFREE by Central Semiconductor is a NPN Power BJT with 4 separate elements. It has a max VCEsat of 0.3V, ideal for switching applications. With a max VCE of 40V and fT of 200MHz, it's suitable for high-speed circuits in various electronic devices.

8 pF

40 V

SEPARATE, 4 ELEMENTS

40

TO-116

R-PDIP-T14

e3

4

14

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

DUAL

SWITCHING

SILICON

200 MHz

.3 V

FZT705QTA by Diodes Incorporated

FZT705QTA

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

15 pF

120 V

DARLINGTON

2000

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

2.5 V

FZT855QTA by Diodes Incorporated

FZT855QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

22 pF

150 V

SINGLE

15

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SILICON

90 MHz

.355 V