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1.3 W Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SB1302T-TD-E by Onsemi

2SB1302T-TD-E

Onsemi

Onsemi's 2SB1302T-TD-E is a PNP BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 5A. With a min. DC current gain of 60, it's ideal for switching applications in small outline packages at up to 150 °C operating temperature.

COLLECTOR

5 A

20 V

SINGLE

60

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.3 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

FLAT

SINGLE

30

SWITCHING

SILICON

320 MHz