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.35 A Power Bipolar Junction Transistors (BJT) 1

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BA12003B by ROHM

BA12003B

ROHM

ROHM's BA12003B is a NPN BJT transistor with hFE of 1000, VCE of 55V, and IC of 0.35A. Ideal for switching applications due to its complex configuration. Comes in a rectangular package with 16 terminals for through-hole mounting.

.35 A

55 V

COMPLEX

1000

R-PDIP-T16

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON