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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Bipolar Junction Transistors (BJT) 2

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STD840DN40 by STMicroelectronics

STD840DN40

STMicroelectronics

STD840DN40 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures reliable performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

R-PDIP-T8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

3 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STD845DN40 by STMicroelectronics

STD845DN40

STMicroelectronics

STD845DN40 from STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures efficient performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON