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80 MHz Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2SA2154CT-Y(TPL3) by Toshiba

2SA2154CT-Y(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

120

1

150 Cel

PNP

.1 W

Other Transistors

YES

80 MHz

2SA2154MFV-GR(TPL3) by Toshiba

2SA2154MFV-GR(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

SINGLE

200

1

150 Cel

PNP

.15 W

Other Transistors

YES

80 MHz

2SC5233-B(TE85L,F) by Toshiba

2SC5233-B(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

.5

1

125 Cel

NPN

.1 W

Other Transistors

YES

80 MHz