Loading...

8.33 W Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
PMN40UPE,115 by NXP Semiconductors

PMN40UPE,115

NXP Semiconductors

PMN40UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for surface mount applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. Ideal for efficient switching in various electronic circuits.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

8.33 W

Other Transistors

YES

TIN

30

PMN27XPE,115 by NXP Semiconductors

PMN27XPE,115

NXP Semiconductors

PMN27XPE,115 by NXP Semiconductors is a P-CHANNEL FET with 4.4A max drain current and 8.33W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high-performance transistors.

SINGLE

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

8.33 W

Other Transistors

YES

TIN

30