44 W Other Function Transistors 1

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Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
FQD8P10TM-SB82052 by Fairchild Semiconductor

FQD8P10TM-SB82052

Fairchild Semiconductor

Fairchild Semiconductor's FQD8P10TM-SB82052 is a P-CHANNEL MOSFET with 6.6A max drain current and 44W power dissipation. Ideal for enhancement mode applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities in compact designs.

SINGLE

6.6 A

6.6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

44 W

Other Transistors

YES

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