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180 W Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
TTC0002(Q) by Toshiba

TTC0002(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Minimum DC Current Gain (hFE): 80;

18 A

SINGLE

80

1

150 Cel

NPN

180 W

Other Transistors

NO

2SA1987O(Q) by Toshiba

2SA1987O(Q)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 80;

15 A

SINGLE

80

1

150 Cel

PNP

180 W

Other Transistors

NO

TTA0002(Q) by Toshiba

TTA0002(Q)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Maximum Operating Temperature: 150 Cel;

18 A

SINGLE

80

1

150 Cel

PNP

180 W

Other Transistors

NO