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1.6 W Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
FDC602P-F095 by Fairchild Semiconductor

FDC602P-F095

Fairchild Semiconductor

FDC602P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 5.5A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic circuits requiring high-power switching capabilities.

SINGLE

5.5 A

5.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES

MT3S113P(TE12L,F) by Toshiba

MT3S113P(TE12L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1.6 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

200

1

150 Cel

NPN

1.6 W

Other Transistors

YES

5500 MHz

FDC640P_F095 by Fairchild Semiconductor

FDC640P_F095

Fairchild Semiconductor

FDC640P_F095 by Fairchild Semiconductor is a P-CHANNEL transistor with 4.5A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES