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1.6 W Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
FDC602P-F095 by Fairchild Semiconductor

FDC602P-F095

Fairchild Semiconductor

FDC602P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 5.5A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic circuits requiring high-power switching capabilities.

SINGLE

5.5 A

5.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES

MT3S113P(TE12L,F) by Toshiba

MT3S113P(TE12L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1.6 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

200

1

150 Cel

NPN

1.6 W

Other Transistors

YES

5500 MHz

FDC640P_F095 by Fairchild Semiconductor

FDC640P_F095

Fairchild Semiconductor

FDC640P_F095 by Fairchild Semiconductor is a P-CHANNEL transistor with 4.5A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES